Integrated manufacturing of REciclable multi-material COmposites for the TRANSport sector

A 570 meV emission shift is achieved through surface?enhanced Landau damping during phase transitions. In crystalline Sb?Te?, localized surface plasmons facilitate hot?electron injection, shifting the emission energy from 1.64 to 2.21 eV. This tunability is further enhanced by applying a DC voltage bias, making it suitable for integration with on?chip quantum photonic systems.Tuning quantum emission to a specific wavelength at room temperature holds significant promise for enhancing secure quantum communication, particularly by aligning with the Fraunhofer lines in the solar spectrum. The integration of quantum emitters with phase?change materials enables emission wavelength modulation, especially when strong field enhancement is present. Antimony telluride (Sb2Te3) exhibits the potential to facilitate this functionality through its support of interband plasmonics and phase?change behavior. In this study, Sb?Te? antennae are designed and fabricated to tune the emission energy of adjacent perovskite quantum dots (QDs) by over 570 meV. The underlying mechanism involves the localized surface plasmons (LSPs) on Sb?Te? nanostructures, which exhibit a surface?enhanced Landau damping process that facilitates the decay of LSPs into electron?hole pairs. The generated hot electrons are then injected into perovskite QDs via the microscopic electron transport process, which can be triggered by the transition of Sb2Te3 from amorphous to a crystalline state, resulting in a significant emission energy shift from 1.64 to 2.21 eV. Furthermore, the emission energy of perovskite QDs on crystalline Sb?Te? nanoantennae can be modulated through DC voltage bias, highlighting the potential for extensive wavelength tunability of quantum emitters integrated with electronic systems.

» Publication Date: 10/03/2025

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