Integrated manufacturing of REciclable multi-material COmposites for the TRANSport sector
Effect of SiGe-Composite Placement on Quantum Effects of a Nanowire FET Using NEGF
In this work, SiGe composite/Ge/Si heterostructure-based junctionless nanowire transistor is investigated. To minimise the lattice mismatch, the composition of Ge is kept at 0.45. Various heterostructures examined are Si1-xGeXGeSi, GeSi1-xGeXSi, Si1-xGeXSiGe, and GeSiSi1-XGeX. For simulation, the Schrodinger–Poisson equation is used to form a Hamiltonian matrix, and to enhance the accuracy of the results, non-equilibrium Green’s function is used to calculate the transport parameters. Different characteristics examined are band energy, transmission probability, and density of states at the source and drain electrodes. The findings demonstrate that the Ge-Si–Si0.45Ge0.55 configuration exhibits the best IDS -VGS Characteristics with high ION/IOFF ratio and steep subthreshold swing, indicating its potential for future low-power electronic applications.
» Reference: 10.1007/s12633-024-03197-0
» Publication Date: 15/11/2024
This project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement Nº 768737
